symbol parameters & conditions unit min. typ. max. v ce =8v, i c = 120 ma, class c c cb collector base capacitance: f = 1 mhz pf 1.5 bipolarics, inc part number b 30 v180b silicon microwave power transistor features: common base package configuration high output power 1 w @ 1.0 ghz high gain bandwidth product f t = 8.0 ghz @ i c = 140 ma high gain g pe = 11.5 db @ 1.0ghz performance d ata: electrical characteristics (t a = 25 o c) high reliability gold metallization nitride passivation diffused ballast resistors ceramic & pill packages available product data sheet v ceo collector-emitter voltage 30 v v ebo emitter-base voltage 1.5 v i c collector current (instantaneous) 3 2 0 ma t j junction temperature 200 o c t stg storage temperature -65 to 200 o c v cbo collector-base voltage 60 v symbol parameters rating units absolute maximum ratings: p 1db power output at 1 db compression: f = 1.0 ghz w 2 collector efficiency class c % 65 h fe forward current transfer ratio: v cb = 5v, i c = 30 ma 30 100 300 p t total power dissipation w 3.0
page 2 bipolarics, inc part number b 30 v 1 8 0b silicon microwave power transistor 0.11 (2.80) 1 2 3 4 45 0.060 (1.524) 0.880 (22.35) 0.030 (0.762) 0.004 (0.102) 0.210 (5.334) 0.045 (1.143) 0.225 (5.71) 1 2 3 4 45 1.030 (26.16) 0.055 (1.40) 0.280 dia (7.11 dia) 0.005 0.13 ( ) 0.13 (3.30) 50 ceramic 4 lead pak surface mount 28 0. 280 " pill package 20 0. 210 " pill package emitter collector base .125 (3.175) .050 (1.27) .050 (1.27) .090 (2.286) .050 (1.27) .050 (1.27) .140 (3.556) .250 (6.35) .250 (6.35) .560 (14.224) base .160 (4.064) .050 (1.27) .020 (.508) .070 (1.778) .190 (4.826) collector emitter base base collector emitter 0.086 (2.184) base base 08 ceramic so8 package notes: (unless otherwise specified) 1. dimensions are in 2. tolerances: in .xxx = .005 mm .xx = .13 3. all dimensions nominal; subject to change without notice (mm) lead 1 2 3 4 20 & 28 base emitter base collector package drawings are not to scale.
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